Metal Oxide Memristors: Switching Phenomena in Van Der Waals Nanostructures

Grant number: DE150100909 | Funding period: 2015 - 2020

Completed

Abstract

This project aims to integrate two recently researched phenomena: memristors (resistive memory) and planar materials. It aims to adopt atomically thin, planar materials for memristors enabling the realisation of high performance resistive memory devices. The physical and environmental effects that govern the memristive properties, which are of utmost importance in understanding resistive memory nature, will be investigated. While generating breakthrough knowledge, the key outcomes of this project will lay the foundation for a novel class of memory devices based on planar van der Waals nanostructures. Such a breakthrough will contribute to the realisation of sustainable memristor technology.

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